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CCD
和CMOS探测器
Article text.
--
Peng Wenxi - 2019-07-22
1.Hamamastu-CCD
*
背照式CCD面阵传感器 S12101
*see in
Selection-guide
2.Gpixel CMOS
*
背照式CMOS面阵GSENSE400BSI
*说明:GSENSE400BSI-TVISB针对长波段的量子效率优化,主要是Epi thickness增厚到10um,因此X射线探测效率也获得了提高。 X射线探测效率计算如下, 钝化层SiO 7.5nm, 抗反射层SiN 63nm,Epi 10um,
QE_theo= T_SiO x T_SiN*(1-T_Si-Epi), T是各层的透过率。
Ref in
* [1]
Characterization of a back-illuminated CMOS camera for soft x-ray coherent scattering
*[2]
Developments of scientific CMOS as focal plane detector for Einstein Probe mission
3.E2V-CCD
*
Imaging CCD
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2019-07-22 - 08:38
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Quantum Efficiency
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PengWenxi
CCD
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Topic revision: r2 - 2019-07-22
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PengWenxi
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